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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage CHA IN Collector current Base current Collector dissipation Collector-emitter voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC MAX 850 500 7 5 8 2 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak TC=25ae 70 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3947 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE= 500 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 850 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A ;IB=0.5A VCE=800V; IE=0 TC=100ae VEB=6V ;IC=0 1.5 0.1 1.0 0.1 V ICBO Collector cut-off current mA IEBO Emitter cut-off current hFE fT DC current gain Rise time Transition frequency IC=2.5A ; VCE=5V COB Switching times CHA IN Output capacitance Storage time Fall time E SEM NG IC=0.5A ; VCE=10V OND IC 10 TOR UC 30 20 70 mA MHz IE=0 ; VCB=10V;f=1MHz pF tr 0.5 IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A |I s tstg 3.0 |I s tf 0.3 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3947 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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